Note:
The calculation model used here does not take into account the backward diode components.
In the high current range exceeding several tens of mA, the results may differ significantly from the calculations.
Eg : energy gap 1.11 [eV]
k : Boltzmann constant 1.380649 × 10-23 [J K-1]
q : elementary charge 1.602176634 × 10-19 [C]
n : emission coefficient
T0 : Nominal temperature in Kelvin. 273.15 + 27 [K]
T1 : Junction temperature in Kelvin. 273.15 + Tj [K]
XTI : Saturation current temperature exponent. Usually equal to 3 for junction diodes, 2 for Schottky barrier diodes.
For high Vin, such as Vin > 220 n VT, the following Newton-Raphson method is used.
fig.1 Example of a plot of calculation results
fig.2 Example of Vf characteristics of a real diode (Adapted from Nexperia, BAV70 datasheet)
Forward current as a function of forward voltage; typcal values